Infineon Technologies S26KL256SDABHM030 — Memory (DRAM / SRAM / Flash / EEPROM)
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Infineon Technologies / Memory (DRAM / SRAM / Flash / EEPROM)

Infineon S26KL256SDABHM030 256Mbit Parallel Flash, AEC-Q100

MPN S26KL256SDABHM030
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Infineon Technologies HyperFlash™ KL series, Automotive AEC-Q100 parallel NOR flash, S26KL256SDABHM030, 256Mbit, 96 ns access time, 100 MHz clock, 2.7 V supply, -40 to +125°C, 24-ball FBGA.

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Supply Voltage 2.7

Full Technical Specifications

13 Parameters
S26KL256SDABHM030 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q100, HyperFlash™ KL
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 125°C (TA)
Frame_size256Mbit
Access time96 ns
Memory typeNon-Volatile
Frequency100000000.0
Package_typeBulk
Memory formatFLASH
StatusActive
Supply voltage2.7
Memory organization32M x 8
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Technical Details & Description

256 Mbit parallel NOR flash for automotive code storage

The S26KL256SDABHM030: That temperature range covers under-hood and engine-bay deployments where the flash must retain code through hot-soak and cold-crank events. Organised as 32M x 8 bits, the device uses a parallel interface running at 100 MHz with a 96 ns initial access time — the random-read latency is low enough for direct code execution (XiP) from flash without a shadow copy to RAM, saving BOM cost and board space.

Infineon lists the S26KL256SDABHM030 as Active.

Parallel interface and supply voltage — board-fit details

Packaged in a 24-ball FBGA, surface-mount. The footprint is standard for the HyperFlash™ KL family; the ball pitch and layout match the reference design in Infineon's application notes for the Traveo and AURIX microcontroller families.

S26KL256SDABHM030
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