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Infineon Technologies S25FL164K0XMFBQ10 — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon S25FL164K0XMFBQ10 64Mbit SPI NOR Flash, 108 MHz

MPNS25FL164K0XMFBQ10
Obsolete

Infineon FL1-K series 64Mbit SPI NOR Flash, 108 MHz Quad I/O, 2.7-3.6 V, 8-SOIC (0.209 in), AEC-Q100 Grade 2, -40°C to 105°C, 8M × 8 organization, 3ms write cycle.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

S25FL164K0XMFBQ10 specifications
ParameterValue
SeriesAutomotive, AEC-Q100, FL1-K
Memory typeNon-Volatile
MountingSurface Mount
Voltage2.7V ~ 3.6V
Frequency108 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C ~ 105°C (TA)
PackageTray
TechnologyFLASH - NOR
Memory size64Mbit
Memory formatFLASH
Case8-SOIC (0.209\", 5.30mm Width)
Memory organization8M x 8
Write cycle time - word, page3ms

Product details

64 Mbit SPI NOR Flash for automotive and industrial storage

The Infineon S25FL164K0XMFBQ10 is a 64 Mbit SPI NOR Flash memory from the FL1-K series, organized as 8M × 8 bits. It communicates over a Quad I/O SPI interface at up to 108 MHz, delivering read throughput suitable for code shadowing, firmware storage, and data logging in embedded systems.

Buyers should evaluate a pin-compatible alternative within the FL1-K family for new designs or long-term production support.

The 108 MHz clock rate with Quad I/O (four data lines) gives a theoretical peak read throughput of 54 MB/s in fast-read mode. For a 64 Mbit device, that means the entire array can be read in roughly 150 ms. In practice, the 3 ms page write cycle (word or page) sets the floor for programming throughput — about 330 bytes per page write assuming a 256-byte page. The SPI interface keeps pin count low (8-SOIC package), which simplifies PCB routing and frees GPIOs on the host MCU.

Package and footprint — 8-SOIC with 5.30 mm width

No exposed thermal pad; power dissipation is modest for a NOR Flash (typical active current in the low tens of mA).

Frequently asked questions

Can this part handle a 95°C local ambient at the SOIC pad in an under-hood application?

The AEC-Q100 Grade 2 rating specifies -40°C to 105°C maximum ambient (TA). A 95°C local ambient leaves approximately 10°C of headroom to the rating limit. If the SOIC pad temperature is confirmed at or below 95°C in the customer's thermal simulation, the part passes the Grade 2 boundary. Grade 2 qualification includes temperature cycling and high-temperature operational life testing not applied to commercial-temperature variants.