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Infineon Technologies S25FL128P0XNFI011M — Memory (DRAM / SRAM / Flash / EEPROM)

S25FL128P0XNFI011M 128Mbit SPI NOR Flash, Obsolete

MPNS25FL128P0XNFI011M
Obsolete

Infineon FL-P series SPI NOR flash, 128Mbit, 16M x 8, 104 MHz clock, 2.7-3.6V supply, 8-WDFN exposed pad (6x8mm), -40 to 85°C, 3ms page write cycle, Tray.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

S25FL128P0XNFI011M specifications
ParameterValue
SeriesFL-P
Memory typeNon-Volatile
MountingSurface Mount
Voltage2.7V ~ 3.6V
Frequency104 MHz
Memory interfaceSPI
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologyFLASH - NOR
Memory size128Mbit
Memory formatFLASH
Case8-WDFN Exposed Pad
Memory organization16M x 8
Write cycle time - word, page3ms

Product details

128Mbit SPI NOR in an 8-WSON footprint

The S25FL128P0XNFI011M is a 128Mbit SPI NOR flash from Infineon's FL-P series, organized as 16M x 8 bits. It communicates over a standard SPI bus at up to 104 MHz clock frequency, delivering sustained read throughput for code shadowing or data logging in embedded systems. Housed in an 8-WDFN exposed pad package (6x8mm body, supplier device package 8-WSON), the part requires a thermal land pattern on the PCB to sink heat from the die during sustained erase or write cycles.

Supply and temperature grade

Page write cycle time is 3ms typical — budget this into firmware update routines; a full 256-byte page program takes at least 3ms before the next command can be issued. Sector erase times are longer and dominate the total update window.

Quantities are lot-specific; each reel or tray is inspected for authenticity and traceability before shipment.

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