MMBT2907ALT1HTSA1

Infineon Technologies

Infineon MMBT2907ALT1HTSA1, PNP general-purpose transistor, 60 V VCEO, 600 mA IC, 330 mW, 200 MHz fT, PG-SOT23 package, Tape & Reel.

Infineon Technologies MMBT2907ALT1HTSA1
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[IN STOCK] In Stock: 527 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MMBT2907ALT1HTSA1 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typePNP
Voltage - collector emitter breakdown60 V
Current - collector (Ic)600 mA
Current - collector cutoff10nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 150mA, 10V
Power - max330 mW
Frequency - transition200MHz
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic1.6V @ 50mA, 500mA

Technical details

60 V, 600 mA PNP in PG-SOT23 — what it handles

The Infineon MMBT2907ALT1HTSA1 is a PNP general-purpose switching transistor in a PG-SOT23 package. The transition frequency of 200 MHz suits moderate-speed switching and driver circuits — relay coils, small-signal loads, and level translation where a PNP pull-up is needed.

Last Buy — plan the BOM line now

That means the manufacturer has announced end-of-life and the final order window is open. If this transistor is on your BOM, the decision is whether to secure a last-time-buy quantity or qualify a replacement before supply tightens.

DC current gain and saturation — drive margin check

Minimum DC current gain (hFE) is 100 at 150 mA collector current with 10 V VCE. That gives a solid forced-beta of 10 or better for saturated switching at moderate currents. The VCE(sat) max is 1.6 V at 50 mA base drive and 500 mA collector current — a typical Darlington-driver or relay-coil sink scenario. For linear operation, the gain holds well into the hundreds of milliamps range.

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