Infineon OptiMOS N-Channel MOSFET, 25 V, 40 A, 8.1 mOhm Rds(on) at 10 V, PG-TDSON-8-25 package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 26W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 8.1mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.1 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 670 pF @ 12 V |
The Infineon ISZ0901NLSATMA1 is a 25 V N-channel OptiMOS MOSFET in a PG-TDSON-8-25 package.
Rated 40 A continuous drain current at Tc=25°C, with the 26 W power dissipation ceiling defining the thermal budget.
Lifecycle status is Active — no last-time-buy or obsolescence risk for ongoing production. ROHS3 compliant.
Yes, ROHS3 compliant.