100 V N-channel from the OptiMOS™ 5 family
The Infineon ISZ0804NLSATMA1 is a 100 V N-channel power MOSFET built on the OptiMOS™ 5 trench technology. It delivers an 11.5 mOhm maximum on-resistance at 20 A with a 10 V gate drive, and a 24 nC typical gate charge at 10 V.
Active lifecycle — no LTB pressure
The ISZ0804NLSATMA1 carries an Active product status and is ROHS3 compliant. There is no last-time-buy or end-of-life notice on this line. For a BOM freeze or a new design-in, this part is current-production and available through independent distribution; pricing and lead time are confirmed at quote time against an RFQ.
