60 V N-channel with 3.4 mOhm — the conduction-loss floor
The Infineon ISZ034N06LM5ATMA1 is an N-channel MOSFET from the OptiMOS™ 5 family, rated for 60 V drain-source breakdown and a maximum continuous drain current of 19 A at 25°C ambient (112 A at case temperature). At 4.5 V drive the Rds(on) is higher; the datasheet curve shows the multiplier.
Input capacitance Ciss is 3500 pF at 30 V Vds. This capacitance, combined with the gate resistance, sets the turn-on and turn-off delay times and the switching energy per cycle.
Temperature range and thermal management
This allows headroom in high-ambient applications like motor drives in enclosures or under-hood electronics. Maximum power dissipation is 2.5 W at ambient temperature (25°C) and 83 W at case temperature.
ROHS3 compliant per the listing.