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Infineon Technologies ISS55EP06LMXTSA1

Infineon ISS55EP06LMXTSA1 OptiMOS P-Channel MOSFET

MPNISS55EP06LMXTSA1
End of Life

Infineon OptiMOS ISS55EP06LMXTSA1, P-Channel MOSFET, 60 Vdss, 180 mA continuous drain, 5.5 Ohm Rds(on) at 10 V gate drive, SOT-23-3 package, -55 to 150 °C junction temperature.

$0.45Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

ISS55EP06LMXTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C180mA (Ta)
Power dissipation400mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 11µA
Rds on (Max) @ id, vgs5.5Ohm @ 180mA, 10V
Gate charge (Qg) (Max) @ vgs0.59 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds18 pF @ 30 V

Product details

Small-signal P-Channel switch for 60 V rails

It comes in a standard SOT-23-3 surface-mount package (Infineon code PG-SOT23-3-5). This is the part you reach for when you need a high-side load switch, a battery-protection pass element, or a signal-level inverter on a 12 V, 24 V, or 48 V rail where the load stays under 180 mA.

Rds(on) is specified at 5.5 Ohm maximum with 180 mA drain current and 10 V gate drive. At 180 mA the voltage drop across the channel is about 1 V, and the conduction loss is 180 mW — nearly half the 400 mW package power dissipation budget. For continuous operation at 85 °C ambient, you will want to derate the current to keep junction temperature under 150 °C. The 5.5 Ohm figure also tells you this is not a power-switching FET; it is a signal-level or light-load device.

Gate charge and capacitance — drives from a GPIO

Those numbers are low enough that a microcontroller GPIO pin can switch this FET on and off at tens of kilohertz without an external driver. The gate threshold voltage is 2 V maximum at 11 µA drain current, so 3.3 V logic will turn it fully on for loads under a few milliamps, but for the full 180 mA rating you need the 4.5 V or 10 V drive levels listed.

Frequently asked questions

Is ISS55EP06LMXTSA1 RoHS compliant?

Yes, it is ROHS3 compliant.