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Infineon Technologies ISS17EP06LMXTSA1

Infineon ISS17EP06LMXTSA1 P-Channel MOSFET, 60 V, 300 mA

MPNISS17EP06LMXTSA1
End of Life

Infineon OptiMOS ISS17EP06LMXTSA1, P-Channel MOSFET, 60 Vdss, 300 mA continuous drain, 1.7 Ohm Rds(on) at 10 V, PG-SOT23-3 package, -55°C to 150°C junction temperature.

$0.38Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ISS17EP06LMXTSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C300mA (Ta)
Power dissipation360mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 34µA
Rds on (Max) @ id, vgs1.7Ohm @ 300mA, 10V
Gate charge (Qg) (Max) @ vgs1.79 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds55 pF @ 30 V

Product details

P-channel load switch in a SOT-23

The ISS17EP06LMXTSA1: It comes in a PG-SOT23-3 package, a compact footprint for board-level load switching, battery protection, or high-side level translation where the supply rail is 12 V or 24 V.

On-resistance and drive voltage — what 1.7 Ohm means at the rail

Plan for a 5 V or 10 V gate signal if the application needs the rated 300 mA throughput without excessive voltage drop. Gate charge is 1.79 nC at 10 V, a light load for any microcontroller GPIO or small-signal driver. Input capacitance is 55 pF at 30 V Vds, which keeps the switching edge rates fast enough for low-frequency PWM or on/off control without a dedicated gate resistor.

Thermal envelope in a SOT-23

Maximum power dissipation is 360 mW at 25 °C ambient, derated to zero at 150 °C junction. The SOT-23-3 package has no exposed pad; the drain is pin 2, and the copper area on the PCB under the part sets the effective thermal resistance. For continuous 300 mA through a 1.7 Ohm channel, the I²R loss is about 150 mW — within the budget at room temperature, but above 85 °C ambient the margin shrinks.

Frequently asked questions

What is the Rds(on) of ISS17EP06LMXTSA1?

The part also specifies a 4.5 V drive level, but on-resistance will be higher at that lower gate voltage — check the typical curve in the datasheet for the exact value at your operating point.