P-Channel 60 V switch in a SOT223-4 footprint
The Infineon ISP75DP06LMXTSA1 is a P-Channel enhancement-mode MOSFET from the OptiMOS family, rated for a drain-source voltage of 60 V and a continuous drain current of 1.1 A at 25 °C case temperature. It comes in a PG-SOT223-4 surface-mount package and supports gate drive voltages of 4.5 V and 10 V for maximum Rds(on).
On-resistance and gate charge — switching loss budget
Maximum on-resistance is 750 mOhm at 1.1 A drain current with 10 V gate drive, specified with a total gate charge of 4 nC at 10 V. The low gate charge keeps switching losses manageable in moderate-frequency DC-DC converters or load switches. Input capacitance is 120 pF at 30 V drain-source, which simplifies the drive circuit — a standard logic-level gate driver can handle the switching transitions without excessive cross-conduction.
60 V Vdss — headroom for 24 V and 48 V rails
With a 60 V drain-source rating, this part provides a 2× derating margin for a 24 V supply and comfortable overhead for 48 V telecom or industrial bus rails.