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Infineon Technologies ISP650P06NMXTSA1
Infineon Technologies

ISP650P06NMXTSA1 P-Channel MOSFET, 60V 3.7A, 65mOhm Rds(on)

MPNISP650P06NMXTSA1
End of Life

Infineon OptiMOS™ ISP650P06NMXTSA1, P-Channel MOSFET, 60 V Vdss, 3.7 A continuous drain, 65 mOhm Rds(on) max at 10 V gate drive, PG-SOT223-4 package, -55°C to 150°C junction temperature.

$1.49Ref. price · indicative, final on quote
ISP650P06NMXTSA1 datasheet
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

ISP650P06NMXTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.7A (Ta)
Power dissipation1.8W (Ta), 4.2W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id4V @ 1.037mA
Rds on (Max) @ id, vgs65mOhm @ 3.7A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 30 V

Product details

Gate drive and switching — what 39 nC gate charge buys you

The ISP650P06NMXTSA1: Total gate charge is 39 nC at 10 V. Input capacitance is 1600 pF at 30 V Vds.

Temperature range — rated for harsh environments

The maximum power dissipation is 1.8 W at 25°C ambient (Ta) and 4.2 W at the case (Tc) — the case rating assumes the SOT-223 tab is soldered to a substantial copper pour. Derate above 25°C per the datasheet curve; at 85°C ambient the allowable dissipation drops to roughly 1.2 W.

Package and footprint — PG-SOT223-4

The device is supplied in the PG-SOT223-4 package (TO-261-4 equivalent), a surface-mount package with a large drain tab on the bottom.

Frequently asked questions

What is the Rds(on) of the ISP650P06NMXTSA1?

The maximum on-resistance is 65 mOhm at a drain current of 3.7 A and a gate-source voltage of 10 V. This is the conduction loss spec — at 3.7 A the channel dissipates about 0.9 W.

What package does the ISP650P06NMXTSA1 come in?

The drain tab is the bottom pad.