Skip to main content
Infineon Technologies ISP16DP10LMXTSA1
Infineon Technologies

Infineon ISP16DP10LMXTSA1 P-Channel MOSFET, 100 V, 2.1 A

MPNISP16DP10LMXTSA1
End of Life

Infineon OptiMOS™ ISP16DP10LMXTSA1, P-Channel MOSFET, 100 V Vdss, 2.1 A (Ta) / 3.9 A (Tc), 160 mOhm Rds(on) @ 10 V, PG-SOT223-4, -55 to 150 °C.

$1.49Ref. price · indicative, final on quote
ISP16DP10LMXTSA1 datasheet
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

ISP16DP10LMXTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.1A (Ta), 3.9A (Tc)
Power dissipation1.8W (Ta), 5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2V @ 1.037mA
Rds on (Max) @ id, vgs160mOhm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2100 pF @ 50 V

Product details

100 V P-channel in a small SOT-223 — what it is and where it fits

The Infineon ISP16DP10LMXTSA1 is a P-channel enhancement-mode MOSFET from the OptiMOS™ family, rated for 100 V drain-source and 2.1 A continuous drain current at ambient temperature. It comes in a PG-SOT223-4 surface-mount package — a 4-pin SOT-223 with the tab as drain, standard footprint for reflow or hand-solder assembly. The 160 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses manageable for a small-signal load switch or high-side disconnect. The junction temperature range of -55 °C to 150 °C qualifies it for harsh environments: avionics, outdoor telecom, industrial motor drives, and under-hood automotive auxiliary circuits.

Active lifecycle — no LTB risk for new designs

The ISP16DP10LMXTSA1 carries an Active product status. For a BOM freeze or a new design, this part is a safe call. The ROHS3 compliance covers current RoHS requirements without exemptions.

Frequently asked questions

What is the Vgs threshold of ISP16DP10LMXTSA1?

The maximum gate threshold voltage is 2 V at 1.037 mA drain current. That means a 3.3 V or 5 V logic signal can turn the MOSFET on, though the full 160 mOhm Rds(on) is specified at 10 V gate drive.

What is the maximum drain current for ISP16DP10LMXTSA1?

Continuous drain current is rated at 2.1 A at 25 °C ambient (Ta) and 3.9 A at 25 °C case temperature (Tc). The 2.1 A figure is the practical limit for a typical SOT-223 layout without a heatsink.