ISP16DP10LMXTSA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ ISP16DP10LMXTSA1, P-Channel MOSFET, 100 V Vdss, 2.1 A (Ta) / 3.9 A (Tc), 160 mOhm Rds(on) @ 10 V, PG-SOT223-4, -55 to 150 °C.

Infineon Technologies ISP16DP10LMXTSA1
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[IN STOCK] In Stock: 155 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ISP16DP10LMXTSA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.1A (Ta), 3.9A (Tc)
Power dissipation1.8W (Ta), 5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2V @ 1.037mA
Rds on (Max) @ id, vgs160mOhm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2100 pF @ 50 V

Technical details

The Infineon ISP16DP10LMXTSA1 is a P-channel enhancement-mode MOSFET from the OptiMOS™ family, rated for 100 V drain-source and 2.1 A continuous drain current at ambient temperature. It comes in a PG-SOT223-4 surface-mount package — a 4-pin SOT-223 with the tab as drain, standard footprint for reflow or hand-solder assembly.

Active lifecycle — no LTB risk for new designs

For a BOM freeze or a new design, this part is a safe call. The ROHS3 compliance covers current RoHS requirements without exemptions.

ISP16DP10LMXTSA1
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