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Infineon Technologies ISC0806NLSATMA1

ISC0806NLSATMA1 Infineon OptiMOS 5 N-Ch MOSFET, 100V 97A

MPNISC0806NLSATMA1
End of Life

Infineon OptiMOS™ 5 N-Channel MOSFET, ISC0806NLSATMA1, 100 V, 97 A (Tc), 5.4 mOhm Rds(on) at 10 V, PG-TDSON-8-7 package, -55°C to 150°C junction temperature.

$2.55Ref. price · indicative, final on quote
Infineon Technologies ISC0806NLSATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™ 5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ISC0806NLSATMA1 specifications
ParameterValue
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C16A (Ta), 97A (Tc)
Power dissipation2.5W (Ta), 96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 61µA
Rds on (Max) @ id, vgs5.4mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs49 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3400 pF @ 50 V

Product details

The Infineon ISC0806NLSATMA1 is a 100 V N-channel MOSFET from the OptiMOS™ 5 family, housed in a PG-TDSON-8-7 package. It delivers up to 97 A continuous drain current at case temperature and a maximum on-resistance of 5.4 mOhm at 50 A, 10 V gate drive. Gate-drive logic is flexible: the datasheet specifies Rds(on) at both 4.5 V and 10 V, so the part works with 5 V logic-level gate drivers as well as traditional 10 V drives. Input capacitance is 3400 pF at 50 V Vds — a practical number for estimating switching losses in hard-switched topologies running above 100 kHz.

The PG-TDSON-8-7 is an 8-lead power DFN with an exposed drain pad. The 2.5 W dissipation at ambient temperature (Ta) is the limit without a heatsink — design the PCB copper area accordingly.

Frequently asked questions

What is the Rds(on) of ISC0806NLSATMA1?

Maximum on-resistance is 5.4 mOhm at 50 A drain current with 10 V gate drive.

Is ISC0806NLSATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.

What is the closest functional equivalent to ISC0806NLSATMA1?

The IPD50R950CEAUMA1 is a different class — it is a 500 V CoolMOS™ CE device with 950 mOhm Rds(on) and 4.3 A switching current, suited for high-voltage flyback rather than low-voltage high-current switching. For a 100 V low-Rds(on) replacement, stay within the OptiMOS™ 5 100 V portfolio.