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Infineon Technologies ISC0806NLSATMA1
Infineon Technologies

ISC0806NLSATMA1 Infineon OptiMOS 5 N-Ch MOSFET, 100V 97A

MPNISC0806NLSATMA1
End of Life

Infineon OptiMOS™ 5 N-Channel MOSFET, ISC0806NLSATMA1, 100 V, 97 A (Tc), 5.4 mOhm Rds(on) at 10 V, PG-TDSON-8-7 package, -55°C to 150°C junction temperature.

$2.55Ref. price · indicative, final on quote
ISC0806NLSATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

ISC0806NLSATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™ 5
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C16A (Ta), 97A (Tc)
Power dissipation2.5W (Ta), 96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 61µA
Rds on (Max) @ id, vgs5.4mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs49 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3400 pF @ 50 V

Product details

What the ratings mean for the power stage

The Infineon ISC0806NLSATMA1 is a 100 V N-channel MOSFET from the OptiMOS™ 5 family, housed in a PG-TDSON-8-7 package. It delivers up to 97 A continuous drain current at case temperature and a maximum on-resistance of 5.4 mOhm at 50 A, 10 V gate drive. Gate-drive logic is flexible: the datasheet specifies Rds(on) at both 4.5 V and 10 V, so the part works with 5 V logic-level gate drivers as well as traditional 10 V drives. Input capacitance is 3400 pF at 50 V Vds — a practical number for estimating switching losses in hard-switched topologies running above 100 kHz.

Package and mounting

The PG-TDSON-8-7 is an 8-lead power DFN with an exposed drain pad. Surface-mount soldering on a multi-layer PCB with thermal vias under the pad is expected to reach the 96 W power dissipation at case temperature. The 2.5 W dissipation at ambient temperature (Ta) is the limit without a heatsink — design the PCB copper area accordingly.

Lifecycle and compliance

The ISC0806NLSATMA1 is listed as Active in production and ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of ISC0806NLSATMA1?

Maximum on-resistance is 5.4 mOhm at 50 A drain current with 10 V gate drive.

Is ISC0806NLSATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.

What is the closest functional equivalent to ISC0806NLSATMA1?

The IPD50R950CEAUMA1 is a different class — it is a 500 V CoolMOS™ CE device with 950 mOhm Rds(on) and 4.3 A switching current, suited for high-voltage flyback rather than low-voltage high-current switching. For a 100 V low-Rds(on) replacement, stay within the OptiMOS™ 5 100 V portfolio.