100V N-channel in a compact TDSON — what it delivers
The Infineon ISC0805NLSATMA1 is an N-channel MOSFET from the OptiMOS™ 5 family, rated for 100 V drain-to-source and a maximum continuous drain current of 13 A at ambient or 71 A when the case is heatsunk. The gate charge is 33 nC at 10 V, a figure that tells you the gate-drive energy per cycle and helps size the driver for the switching frequency you plan to run. The part comes in an 8-lead PowerTDFN package (PG-TDSON-8-46), a surface-mount footprint that keeps the board area small while the exposed pad pulls heat into the PCB copper.
The 7.8 mOhm maximum at 50 A and 10 V is the number to use for worst-case conduction loss calculations in a buck converter, OR-ing diode replacement, or load switch. The drive voltage range is 4.5 V to 10 V, but the full Rds(on) spec is guaranteed at 10 V; if you run a 5 V gate drive, expect a higher on-resistance and factor that into the thermal budget. With 33 nC of gate charge at 10 V, the ISC0805NLSATMA1 is not a high-Qg part — it switches cleanly with a standard gate driver IC. The input capacitance is 2200 pF at 50 V drain bias, which gives a rough idea of the drive current needed to hit a target rise time.
The PG-TDSON-8-46 package is a surface-mount PowerTDFN with an exposed drain pad. The dual current rating — 13 A at ambient (2.5 W max) and 71 A at case temperature (74 W max) — is the practical design split: the 71 A figure assumes you have a good thermal path to a heatsink or a multi-layer board with thermal vias. Without that, the ambient rating is the binding limit.
The OptiMOS™ 5 family is Infineon's mainstream 100 V trench technology, widely stocked across the distribution channel.