100 V N-channel in a PG-TDSON-8-7 — what it delivers
The Infineon ISC0802NLSATMA1 is a 100 V N-channel MOSFET from the OptiMOS™ 5 family, built for high-efficiency switching in power supplies, DC-DC converters, and motor-drive stages. It carries a 3.6 mOhm maximum on-resistance at 50 A with a 10 V gate drive, which keeps conduction losses low in high-current paths. The 73 nC gate charge at 10 V is moderate for this voltage class, so the gate-drive power budget stays manageable even at higher switching frequencies.
Package and mounting
Housed in an 8-PowerTDFN (PG-TDSON-8-7), this is a surface-mount package with an exposed drain pad for thermal transfer to the PCB. The mounting type is surface mount, so it suits automated assembly lines. The package footprint is compact for a 100 V / 150 A rated FET, but the thermal pad needs a proper copper area and vias to the inner layers to reach the 125 W power dissipation at the case.
Lifecycle and sourcing
The ISC0802NLSATMA1 is listed as Active, with ROHS3 compliance. There is no end-of-life notice or last-time-buy window, so it is suitable for new designs and production builds.