Infineon OptiMOS™ 5, N-Channel MOSFET, 100 V drain-source, 22 A (Ta) / 150 A (Tc) continuous drain, 3.6 mOhm Rds(on) at 50 A, 10 V gate drive, PG-TDSON-8-7 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 22A (Ta), 150A (Tc) |
| Power dissipation | 2.5W (Ta), 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.3V @ 92µA |
| Rds on (Max) @ id, vgs | 3.6mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 73 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5190 pF @ 50 V |
The Infineon ISC0802NLSATMA1 is a 100 V N-channel MOSFET from the OptiMOS™ 5 family, built for high-efficiency switching in power supplies, DC-DC converters, and motor-drive stages.
The mounting type is surface mount, so it suits automated assembly lines. The package footprint is compact for a 100 V / 150 A rated FET, but the thermal pad needs a proper copper area and vias to the inner layers to reach the 125 W power dissipation at the case.
The maximum Rds(on) is 3.6 mOhm at a drain current of 50 A with a 10 V gate drive.
No, the ISC0802NLSATMA1 is listed as Active with no end-of-life notice.