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Infineon Technologies ISC073N12LM6ATMA1
Infineon Technologies

ISC073N12LM6ATMA1 Infineon OptiMOS 6 N-Channel MOSFET, 120 V

MPNISC073N12LM6ATMA1
End of Life

Infineon OptiMOS 6 series, ISC073N12LM6ATMA1, N-channel MOSFET, 120 V Vdss, 86 A continuous drain (Tc), 7.3 mOhm Rds(on) at 40 A, 10 V, PG-TDSON-8 package, -55°C to 175°C junction temperature.

$2.7Ref. price · indicative, final on quote
ISC073N12LM6ATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

ISC073N12LM6ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™ 6
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)3.3V, 10V
Current - continuous drain (Id) @ 25°C13.4A (Ta), 86A (Tc)
Power dissipation3W (Ta), 125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 50µA
Rds on (Max) @ id, vgs7.3mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2600 pF @ 60 V

Product details

120 V, 86 A N-channel in a PG-TDSON-8 — the switching MOSFET for 48 V rails and motor drives

The Infineon ISC073N12LM6ATMA1 is a 120 V N-channel MOSFET from the OptiMOS 6 generation, rated for 86 A continuous drain current at the case (Tc) and 13.4 A at ambient (Ta). The PG-TDSON-8 package (8-PowerTDFN) is a surface-mount, thermally enhanced design with an exposed pad for heat sinking through the PCB.

7.3 mOhm Rds(on) — conduction-loss floor for the 120 V class

The 7.3 mOhm maximum Rds(on) at Vgs=10 V and 40 A drain current defines the I²R loss per amp. The 125 W power dissipation capability at the case sets the thermal limit. Gate charge totals 36 nC at 10 V.

Package and thermal — PG-TDSON-8 layout notes

The PG-TDSON-8 (8-PowerTDFN) is a surface-mount package with an exposed drain pad on the bottom. The 3 W dissipation at ambient (Ta) assumes minimal copper area; the 125 W at case (Tc) requires a well-designed thermal interface to a heatsink or chassis.

Frequently asked questions

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