120 V, 86 A N-channel in a PG-TDSON-8 — the switching MOSFET for 48 V rails and motor drives
The Infineon ISC073N12LM6ATMA1 is a 120 V N-channel MOSFET from the OptiMOS 6 generation, rated for 86 A continuous drain current at the case (Tc) and 13.4 A at ambient (Ta). The PG-TDSON-8 package (8-PowerTDFN) is a surface-mount, thermally enhanced design with an exposed pad for heat sinking through the PCB.
7.3 mOhm Rds(on) — conduction-loss floor for the 120 V class
The 7.3 mOhm maximum Rds(on) at Vgs=10 V and 40 A drain current defines the I²R loss per amp. The 125 W power dissipation capability at the case sets the thermal limit. Gate charge totals 36 nC at 10 V.
Package and thermal — PG-TDSON-8 layout notes
The 3 W dissipation at ambient (Ta) assumes minimal copper area; the 125 W at case (Tc) requires a well-designed thermal interface to a heatsink or chassis.