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Infineon Technologies ISC028N04NM5ATMA1

Infineon ISC028N04NM5ATMA1 N-Channel MOSFET, 40V 121A

MPNISC028N04NM5ATMA1
End of Life

Infineon OptiMOS™-5 series, ISC028N04NM5ATMA1, N-Channel MOSFET, 40 V Vdss, 121 A Id, 2.8 mOhm Rds(on) at 10 V, 38 nC Qg, 8-PowerTDFN, -55°C to 175°C.

$1.45Ref. price · indicative, final on quote
Infineon Technologies ISC028N04NM5ATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™-5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ISC028N04NM5ATMA1 specifications
ParameterValue
SeriesOptiMOS™-5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)7V, 10V
Current - continuous drain (Id) @ 25°C24A (Ta), 121A (Tc)
Power dissipation3W (Ta), 75W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.4V @ 30µA
Rds on (Max) @ id, vgs2.8mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs38 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2700 pF @ 20 V

Product details

The Infineon ISC028N04NM5ATMA1 is a 40 V, 121 A N-channel MOSFET from the OptiMOS-5 series, built on a metal-oxide trench technology. It delivers a maximum on-resistance of 2.8 mOhm at 50 A with a 10 V gate drive. The 8-PowerTDFN package keeps the source inductance low and the thermal path short. Rated for junction temperatures up to 175 °C.

Package and mounting: 8-PowerTDFN (PG-TDSON-8 FL)

The 8-PowerTDFN is a surface-mount package with a large exposed drain pad on the bottom. Solder the pad to a thermal via array on the PCB to pull heat into the inner planes.

That means it is a safe drop into a production BOM without an immediate obsolescence risk. Stick with the OptiMOS-5 family for 40 V applications.

Frequently asked questions

Is ISC028N04NM5ATMA1 active or obsolete?

The ISC028N04NM5ATMA1 is listed as Active in production. No discontinuation or last-time-buy notice is in effect.