40 V, 121 A N-channel power MOSFET from the OptiMOS-5 family
The Infineon ISC028N04NM5ATMA1 is a 40 V, 121 A N-channel MOSFET from the OptiMOS-5 series, built on a metal-oxide trench technology. It delivers a maximum on-resistance of 2.8 mOhm at 50 A with a 10 V gate drive. The 8-PowerTDFN package keeps the source inductance low and the thermal path short. Rated for junction temperatures up to 175 °C.
Package and mounting: 8-PowerTDFN (PG-TDSON-8 FL)
The 8-PowerTDFN is a surface-mount package with a large exposed drain pad on the bottom. Solder the pad to a thermal via array on the PCB to pull heat into the inner planes.
Lifecycle and sourcing reality
The ISC028N04NM5ATMA1 is listed as Active on Infineon's books, with ROHS3 compliance. No end-of-life notice or last-time-buy window is in effect. That means it is a safe drop into a production BOM without an immediate obsolescence risk. Stick with the OptiMOS-5 family for 40 V applications.
