30 V N-channel MOSFET, 1.9 mOhm — conduction loss in a 30 A rail
Gate charge is 44 nC at 10 V, which is moderate for this Rds(on) class and keeps the switching loss in check up to a few hundred kilohertz. Input capacitance is 2800 pF at 15 V Vds, so the gate-driver output impedance should be sized to hit the target rise time without ringing.
Thermal and package — the 100 A case rating needs a heatsink
The 100 A continuous drain rating is specified at the case temperature (Tc), not ambient — that figure assumes the backside of the PG-TDSON-8-5 package is held at 25 °C, which in practice means a large copper pour on the PCB or a heatsink. The ambient-rated current of 28 A (Ta) is what you get with natural convection on a standard footprint. Maximum power dissipation is 2.5 W at ambient and 69 W at the case, so the thermal design determines how much of the 100 A headroom you can actually use. The 8-PowerTDFN package (supplier code PG-TDSON-8-5) is a surface-mount Power-SO8-like footprint with an exposed drain pad on the bottom. The gate threshold voltage is 2 V maximum at 250 µA, so the part can be driven from a 3.3 V logic rail, though the 4.5 V minimum drive voltage for the rated Rds(on) means a 5 V gate drive gets you closer to the 1.9 mOhm number.
Active production — no obsolescence worry
ROHS3 compliant.