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Infineon Technologies ISC015N04NM5ATMA1

Infineon ISC015N04NM5ATMA1 OptiMOS-5 N-Ch 40V 1.5mOhm MOSFET

MPNISC015N04NM5ATMA1
End of Life

Infineon OptiMOS™-5, ISC015N04NM5ATMA1, N-Channel MOSFET, 40 V Vdss, 1.5 mOhm Rds(on) @ 50 A, 10 V, 206 A Id @ Tc, 67 nC Qg, PG-TDSON-8 FL (SuperSO8), -55°C to 175°C Tj.

$1.72Ref. price · indicative, final on quote
Infineon Technologies ISC015N04NM5ATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™-5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ISC015N04NM5ATMA1 specifications
ParameterValue
SeriesOptiMOS™-5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)7V, 10V
Current - continuous drain (Id) @ 25°C33A (Ta), 206A (Tc)
Power dissipation3W (Ta), 115W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.4V @ 60µA
Rds on (Max) @ id, vgs1.5mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4800 pF @ 20 V

Product details

40 V, 1.5 mOhm — the conduction-loss floor for a high-current rail

The Infineon ISC015N04NM5ATMA1 is an N-channel MOSFET from the OptiMOS™-5 series, built for low-voltage high-current switching.

Total gate charge is 67 nC at a 10 V drive. The input capacitance Ciss is 4800 pF at 20 V Vds; this is a moderate figure for a 40 V FET in this Rds(on) class, so the switching speed is limited more by the gate loop inductance than by the capacitance itself.

175°C junction — thermal budget for tight enclosures

The 175°C maximum is the extended automotive/industrial grade — it allows the FET to run hotter in a sealed enclosure or near a motor winding without derating the current as aggressively as a 150°C-rated part.

Frequently asked questions

Is ISC015N04NM5ATMA1 RoHS compliant?

Yes, the ISC015N04NM5ATMA1 is listed as ROHS3 compliant.