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Infineon Technologies IRSM807-105MHTR — Discrete Semiconductors

Infineon IRSM807-105MHTR µIPM Half-Bridge, 10A, 400V

MPNIRSM807-105MHTR
End of Life

Infineon µIPM™ series, half-bridge driver IC, IRSM807-105MHTR, 10A output, 400V max load, 580mOhm Rds(on), 31-PowerVQFN, surface mount.

$6.27Ref. price · indicative, final on quote
Packaging31-PowerVQFN
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRSM807-105MHTR Technical Specifications
ParameterValue
SeriesµIPM™
Load typeInductive
Mounting typeSurface Mount
Voltage - load400V (Max)
Voltage13.5V ~ 16.5V
Current - output (Channel)10A
InterfaceLogic
Operating temperature150°C (TJ)
PackageBulk
FeaturesBootstrap Circuit
TechnologyUMOS
ApplicationsAC Motors
Rds on580mOhm
Case31-PowerVQFN
Fault protectionUVLO
Output configurationHalf Bridge

Product details

Half-bridge driver for AC motor drives

The Infineon IRSM807-105MHTR is a half-bridge driver IC in the µIPM™ series, rated for 10 A continuous output per channel and a maximum load voltage of 400 V. It integrates the gate drive and power MOSFETs in a single 31-PowerVQFN package, targeting AC motor drives in appliance and light industrial applications.

10 A output, 400 V bus, 580 mOhm Rds(on)

With a typical Rds(on) of 580 mOhm, the conduction loss at 10 A is under 6 W per channel — the 31-PQFN (8x9 mm) package relies on the PCB copper pour for thermal dissipation, so the board layout directly governs the usable duty cycle. The supply range of 13.5 V to 16.5 V powers the internal gate drive and bootstrap circuit, which generates the high-side floating supply from the low-side rail — no isolated DC-DC needed for the high-side gate. Integrated UVLO fault protection holds the outputs off until the supply voltage rises above the threshold, preventing the MOSFETs from operating in the linear region during power-up or brownout. The UMOS technology is a trench-based power MOSFET process that keeps the gate charge low enough for direct logic-level interface — no external level shifter required.

Frequently asked questions

What is the junction temperature rating of IRSM807-105MHTR?

The device is rated for a maximum junction temperature of 150 °C (TJ). This is the absolute limit — the actual operating temperature depends on the thermal resistance of the PCB layout and the load current profile.