IRS2453DSTRPBF

Infineon Technologies

Infineon IRS2453DSTRPBF full-bridge gate driver, N-Channel MOSFET, synchronous channel type, 10V~15.6V supply, 600 V bootstrap, 180/260 mA peak output, 14-SOIC, -25°C~125°C.

Infineon Technologies IRS2453DSTRPBF
[IN STOCK] In Stock: 287 pcs
$2.57/ pc

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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRS2453DSTRPBF specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeRC Input Circuit
Channel typeSynchronous
MountingSurface Mount
Supply voltage10V ~ 15.6V
Logic voltage - VIL, VIH4.7V, 9.3V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)180mA, 260mA
Operating temperature-25°C ~ 125°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Case14-SOIC (0.154\", 3.90mm Width)
Number of drivers1
Driven configurationFull-Bridge
Rise (Fall time)120ns, 50ns

Technical details

Full-bridge driver with 600 V bootstrap — what it handles

The Infineon IRS2453DSTRPBF is a single-channel full-bridge gate driver designed for N-channel MOSFETs in synchronous topologies. Its 600 V maximum bootstrap voltage sets the DC bus ceiling for motor drives, inverters, and switched-mode power supplies where the high-side floating supply rides on the switching node. The 180 mA source / 260 mA sink peak output drives the gate charge of medium-power MOSFETs without excessive switching loss — the 120 ns rise and 50 ns fall times keep dead-time margins tight.

Supply rails and logic thresholds

The driver operates from a 10 V to 15.6 V supply, which matches the typical gate-drive voltage range for standard N-channel MOSFETs. Logic thresholds are set at 4.7 V (VIL) and 9.3 V (VIH), so a 5 V or 3.3 V PWM signal from a controller will not reliably trigger the input — the RC input circuit expects a higher swing. Plan for a level-shift or a dedicated gate-drive PWM output from the MCU.

IRS2453DSTRPBF
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