Full-bridge synchronous gate driver for N-Channel MOSFETs
The Infineon IRS2453DPBF is a full-bridge gate driver IC designed to drive N-Channel MOSFETs in synchronous configurations, with a bootstrap high-side rating up to 600 V. It delivers a peak output current of 180 mA source and 260 mA sink, sufficient to drive the gate capacitance of medium-power MOSFETs in motor-drive, DC-DC converter, and inverter stages. The RC input circuit simplifies signal conditioning from a controller or PWM source.
180/260 mA peak drive — what it buys the switching stage
The 180 mA source and 260 mA sink peak current ratings determine how fast the MOSFET gate capacitance charges and discharges. The 120 ns rise and 50 ns fall times (typical) are adequate for switching frequencies up to several hundred kHz in hard-switched topologies.
The IC operates from a 10 V to 15.6 V supply, matching the gate drive voltage range for standard N-Channel MOSFETs. Logic input thresholds are 4.7 V (VIL) and 9.3 V (VIH).
Last Buy — plan your BOM window
The IRS2453DPBF is classified as Last Buy by Infineon. This means the manufacturer has announced end-of-life and will accept final orders within a defined window. For production continuity, buyers should secure lifetime-buy quantities or qualify a pin-compatible alternative before the LTB window closes.
14-DIP through-hole package — board integration
Housed in a 14-DIP (0.300", 7.62 mm) through-hole package, the IRS2453DPBF suits prototype builds, rework-friendly designs, and low-volume production where wave soldering is preferred. The 14-DIP footprint is standard and widely supported by sockets for easy replacement during development. The through-hole body also aids thermal dissipation into the PCB copper when the part is soldered directly.