Full-bridge driver for 600 V bus applications
The Infineon IRS24531DSTRPBF is a single-channel full-bridge gate driver designed for N-channel MOSFETs, with a bootstrap supply rated to 600 V maximum on the high side. It integrates the RC input circuit and synchronous channel logic needed to drive the four MOSFETs in a full-bridge topology from a single PWM input — no external level-shifting or dead-time generation network required.
Peak output current and switching speed
Peak output current is 180 mA source, 260 mA sink — enough to drive the gate charge of medium-power N-channel MOSFETs in a 500 W to 2 kW inverter stage. The 120 ns rise and 50 ns fall times (typical) keep switching losses within budget for carrier frequencies up to about 50 kHz; above that the gate drive waveform starts to round off and the MOSFETs spend more time in the linear region.
Supply voltage range is 10 V to 15.6 V — the bootstrap capacitor charges to within a diode drop of the supply rail, so the high-side gate drive voltage tracks the supply. Logic input thresholds are 4.7 V (VIL) and 9.3 V (VIH), which means a standard 5 V PWM from a microcontroller will not reliably switch this driver; a level-shifter or a 10 V PWM source is required.
Operating junction temperature range is -25°C to 125°C. The -25°C lower limit is worth noting — if the end equipment must cold-start at -40°C, this part will not meet the requirement without a heater or a different driver. The 14-SOIC package (3.90 mm width) is a standard surface-mount footprint; the 0.154-inch body width fits a typical SOIC-14 land pattern.