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Infineon Technologies IRS2334STRPBF — Memory (DRAM / SRAM / Flash / EEPROM)
Infineon Technologies

IRS2334STRPBF Gate Driver IC, 3-Phase Half-Bridge

MPNIRS2334STRPBF
End of Life

Infineon IRS2334STRPBF, 3-Phase Half-Bridge Gate Driver IC, IGBT/N-Channel MOSFET, Non-Inverting Input, 6 Drivers, 10V~20V Supply, 200mA Source / 350mA Sink Peak Output, 600V Bootstrap, 20-SOIC (7.50mm Width), Surface Mount, -40°C~150°C.

$2.87Ref. price · indicative, final on quote
IRS2334STRPBF datasheet
Packaging20-SOIC (0.295", 7.50mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRS2334STRPBF Technical Specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel type3-Phase
Mounting typeSurface Mount
Voltage10V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.5V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)200mA, 350mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case20-SOIC (0.295\", 7.50mm Width)
Number of drivers6
Driven configurationHalf-Bridge
Rise (Fall time)125ns, 50ns

Product details

Three-phase half-bridge driver for motor-drive and inverter stages

The Infineon IRS2334STRPBF is a 3-phase half-bridge gate driver IC for IGBTs and N-channel MOSFETs. It integrates six drivers in a half-bridge configuration with a bootstrap supply rated to 600 V on the high side. The part accepts a 10 V to 20 V supply and delivers 200 mA source / 350 mA sink peak output current. Logic inputs are non-inverting with VIH of 2.5 V and VIL of 0.8 V. The 20-SOIC (7.50 mm width) package is surface-mount.

Switching speed and gate drive strength

Typical rise time of 125 ns and fall time of 50 ns are moderate. The 200 mA source / 350 mA sink peak currents drive the gate capacitance of a typical IGBT module in under 200 ns.

Temperature range and environment

Rated for -40°C to 150°C junction temperature, the IRS2334STRPBF fits industrial motor drives and outdoor HVAC compressor inverters.

Frequently asked questions

Can IRS2334STRPBF be used with IGBTs?

Yes, the gate type is specified for IGBT and N-Channel MOSFET. The 200 mA source / 350 mA sink peak output is suitable for medium-power IGBT modules.

What are alternatives to IRS2334STRPBF?

The closest functional peer is the Infineon 6ED003L02F2XUMA1, a 3-phase half-bridge driver with inverting inputs, 60 ns rise / 26 ns fall, and 125°C TJ limit. The IRS2005STRPBF is a dual independent half-bridge driver — three are needed per inverter. Neither is a direct pin-compatible replacement; verify pinout and logic polarity before substituting.