Driving IGBTs and MOSFETs up to 4 A peak
The IRS2186STRPBF is a high-side or low-side gate driver from Infineon, designed to drive IGBTs and N-channel MOSFETs in half-bridge and full-bridge topologies. Its 4 A peak source and sink current charges and discharges the gate capacitance quickly, reducing switching losses in motor drives, switch-mode power supplies, and DC-DC converters.
600 V bootstrap and supply flexibility
The bootstrap supply handles up to 600 V on the high side, allowing the driver to float with the switching node in a half-bridge leg.
22 ns rise, 18 ns fall — switching speed matters
The two independent, non-inverting channels let you drive the high-side and low-side FETs separately, with separate timing control for each edge.
Active production, 8-SOIC footprint
Infineon lists the IRS2186STRPBF as an active product with RoHS3 compliance. It ships in the 8-SOIC package, a standard surface-mount footprint that fits into existing layouts for half-bridge gate drive circuits. The -40°C to 150°C junction temperature range covers industrial and automotive ambient conditions, though no AEC-Q grade is stated in the record.