1.9A / 2.3A peak output — drives IGBT and MOSFET gates cleanly
The IRS2183STRPBF: Rated for 1.9 A peak source and 2.3 A peak sink current, this driver can charge and discharge the gate capacitance of medium-power IGBTs and N-channel MOSFETs fast enough to keep switching losses under control in a 100 kHz PWM stage. The 40 ns rise and 20 ns fall times (typical) mean the Miller plateau is traversed quickly, reducing the time the device spends in the linear region.
600 V bootstrap — half-bridge topology ready
The high-side driver is powered by a bootstrap supply rated to 600 V maximum. This covers the full range of 230 VAC and 400 VDC bus voltages found in motor drives, inverters, and switch-mode power supplies. The two channels are independent, so the low-side and high-side gate signals can be interlocked externally or driven from complementary PWM inputs.
Operating supply range is 10 V to 20 V, matching standard 12 V and 15 V gate-drive rails. Both inverting and non-inverting input options are available on the same device, giving flexibility for polarity matching with the PWM controller.
8-SOIC package — board-fit and temperature range
Housed in the standard 8-SOIC (0.154″ width, 3.90 mm body) surface-mount package. ROHS3 compliant (no exemptions), which simplifies compliance for EU and global markets.