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Infineon Technologies IRS2104STRPBF — DC-DC Power Modules
Infineon Technologies

IRS2104STRPBF Half-Bridge Gate Driver, 600V, 8-SOIC

MPNIRS2104STRPBF
End of Life

Infineon IRS2104STRPBF, half-bridge gate driver, 600V bootstrap, 290mA source / 600mA sink peak output, 70ns rise / 35ns fall, 10V–20V supply, -40°C to 150°C junction, 8-SOIC surface mount.

$1.34Ref. price · indicative, final on quote
IRS2104STRPBF datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRS2104STRPBF Technical Specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeSynchronous
Mounting typeSurface Mount
Voltage10V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.5V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)290mA, 600mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)70ns, 35ns

Product details

Half-bridge driver for IGBT and N-channel MOSFET gates

The Infineon IRS2104STRPBF is a high-voltage half-bridge gate driver in an 8-SOIC package, designed to drive two N-channel MOSFETs or IGBTs in a synchronous half-bridge configuration. It integrates a bootstrap diode for the high-side floating supply, rated to 600 V max, so no external high-voltage diode is needed for the bootstrap rail. The input is non-inverting — a single PWM signal on the IN pin produces complementary high- and low-side outputs with built-in deadtime to prevent shoot-through. Supply voltage spans 10 V to 20 V. Peak output current is 290 mA source, 600 mA sink.

600 V bootstrap — what it means for the bus

The 600 V high-side voltage max (bootstrap) sets the DC bus voltage this driver can float on.

Peak output current and switching speed

With 290 mA source and 600 mA sink peak current, the IRS2104STRPBF is sized for medium-power IGBTs and MOSFETs.

Logic thresholds and interface

Logic input thresholds are 0.8 V (VIL) and 2.5 V (VIH).

Lifecycle and sourcing reality

The IRS2104STRPBF carries an Active product status and is ROHS3 compliant. Infineon lists no end-of-life notice for this order code as of the current record. No LTB risk is indicated on the current lifecycle status.

Frequently asked questions

Is IRS2104STRPBF obsolete or end-of-life?

No. The IRS2104STRPBF has an Active product status per Infineon's current lifecycle record. No end-of-life notice is on file. It remains available for new designs and production.

Does IRS2104STRPBF require an external bootstrap diode?

No. The bootstrap diode is integrated inside the IRS2104STRPBF. Only an external bootstrap capacitor (typically 0.1 µF to 1 µF, sized for the gate charge) is needed between the VB and VS pins.

Can IRS2104STRPBF drive two IGBTs simultaneously?

Yes. The IRS2104STRPBF is a half-bridge driver with two outputs — one high-side and one low-side — that drive two IGBTs or N-channel MOSFETs in a synchronous half-bridge configuration. It cannot drive two independent loads; the outputs are complementary with built-in deadtime.

What is the difference between IRS2104STRPBF and IR2104STRPBF?

The IRS2104STRPBF and IR2104STRPBF are functionally identical half-bridge drivers with the same pinout, 600 V bootstrap, 290/600 mA peak output, and 70/35 ns rise/fall times. The prefix 'IRS' denotes Infineon's lead-free, ROHS3-compliant plating finish; the 'IR' prefix is the older tin-lead finish. Both are Active and interchangeable in most designs, but the IRS version is preferred for new ROHS-compliant builds.

What are the specifications of IRS2104STRPBF?

Key specs: half-bridge driver for IGBT/N-Ch MOSFET, 600 V bootstrap voltage, 10 V–20 V supply, 290 mA source / 600 mA sink peak output, 70 ns rise / 35 ns fall typical, non-inverting input with 0.8 V / 2.5 V logic thresholds, -40°C to 150°C junction temperature, 8-SOIC package, ROHS3 compliant, Active lifecycle.