IRS2007STRPBF

Infineon Technologies

Infineon Technologies IRS2007STRPBF half-bridge gate driver, 600 mA per channel, 200 V load, 10 V to 20 V supply, 8-SOIC, Tape & Reel.

Infineon Technologies IRS2007STRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRS2007STRPBF specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - load200V
Supply voltage10V ~ 20V
Current - output (Channel)600mA
InterfaceLogic
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyPower MOSFET
ApplicationsBattery Powered
Case8-SOIC (0.154\", 3.90mm Width)
Output configurationHalf Bridge (2)

Technical details

Half-bridge driver for 200 V bus rails

The IRS2007STRPBF is a half-bridge gate driver rated for 600 mA source and sink per channel, with a load voltage ceiling of 200 V. It drives the high- and low-side gates of a power MOSFET half-bridge from a single 10 V to 20 V supply rail. The 200 V load rating covers 48 V, 72 V, and 100 V bus architectures with margin — the bootstrap diode and level shifter are built for the full rail swing, not just the low-side gate drive.

600 mA gate drive and temperature range

The 10 V to 20 V supply range lets you tune the gate drive voltage to the MOSFET's plateau voltage without a separate regulator. The 8-SOIC package keeps the layout tight — the high-side gate drive path runs through the bootstrap diode and capacitor, so the PCB track length from the driver output to the MOSFET gate should stay under 20 mm to avoid ringing.

IRS2007STRPBF
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