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Infineon Technologies IRS2005STRPBF — Power Management (PMIC / Gate Driver)

IRS2005STRPBF Half-Bridge Gate Driver, 200V Bootstrap

MPNIRS2005STRPBF
End of Life

Infineon IRS2005STRPBF half-bridge gate driver, 200 V bootstrap, 290 mA source / 600 mA sink peak, 70 ns rise / 30 ns fall, 10-20 V supply, -40 to 150°C TJ, 8-SOIC package.

$0.92Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRS2005STRPBF specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.5V
High side voltage - max (Bootstrap)200 V
Current - peak output (Source, sink)290mA, 600mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)70ns, 30ns

Product details

Half-bridge gate driver for 200 V bus rails

The Infineon IRS2005STRPBF is a half-bridge gate driver for IGBTs and N-channel MOSFETs. Its bootstrap supply handles up to 200 V on the high side. Supply range is 10 V to 20 V. The 8-SOIC package keeps board area small.

The 150°C TJ ceiling means no external derating is required for most enclosed inverter designs.

Switching performance and dead-time planning

The 70 ns rise and 30 ns fall times are asymmetric — the turn-off edge is roughly twice as fast as turn-on. That matters for dead-time: you need to ensure the low-side gate has fully discharged before the high-side turns on, or vice versa, to avoid shoot-through. The faster fall gives you margin on the turn-off side, but the turn-on edge still sets the minimum dead-time window. In practice, with a 600 mA sink, the driver pulls the gate down hard; the 290 mA source is gentler on the bootstrap capacitor recharge.

Frequently asked questions

What are the alternatives to IRS2005STRPBF?

The IR21064STRPBF is a functional peer in the same 8-SOIC footprint, offering a high-side or low-side driven configuration with 150 ns rise and 50 ns fall times. It shares the same 10 V supply and -40°C to 150°C temperature range, but the switching speed and drive current differ — verify timing margins before substituting.

Can IRS2005STRPBF drive two N-channel MOSFETs in half-bridge?

Yes. The part is configured as a half-bridge driver with two independent channels, one for the high-side and one for the low-side N-channel MOSFET. The bootstrap circuit handles the high-side gate voltage above the DC rail.