Half-bridge gate driver for 200 V bus rails
The Infineon IRS2005STRPBF is a half-bridge gate driver for IGBTs and N-channel MOSFETs. Its bootstrap supply handles up to 200 V on the high side. The two independent channels deliver 290 mA source and 600 mA sink peak current, with typical rise and fall times of 70 ns and 30 ns respectively. Supply range is 10 V to 20 V. The 8-SOIC package keeps board area small.
Temperature grade and deployment environment
Rated for a junction temperature range of -40°C to 150°C, this driver is specified for industrial motor drives, automotive under-hood electronics, and outdoor telecom power supplies. The 150°C TJ ceiling means no external derating is required for most enclosed inverter designs.
Switching performance and dead-time planning
The 70 ns rise and 30 ns fall times are asymmetric — the turn-off edge is roughly twice as fast as turn-on. That matters for dead-time: you need to ensure the low-side gate has fully discharged before the high-side turns on, or vice versa, to avoid shoot-through. The faster fall gives you margin on the turn-off side, but the turn-on edge still sets the minimum dead-time window. In practice, with a 600 mA sink, the driver pulls the gate down hard; the 290 mA source is gentler on the bootstrap capacitor recharge.