Infineon HEXFET® N-Channel MOSFET, 55 V Vdss, 51 A continuous drain, 13.5 mOhm Rds(on) at 10 V Vgs, logic-level gate drive, D2PAK (TO-263) surface-mount package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 51A (Tc) |
| Power dissipation | 80W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 13.5mOhm @ 31A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1620 pF @ 25 V |
The IRLZ44ZSTRRPBF: Gate charge is 36 nC at 5 V.
This exact ordering code carries an Obsolete lifecycle status. The last-time-buy window has passed; Infineon no longer manufactures the IRLZ44ZSTRRPBF.
Rds(on) is 13.5 mOhm at 10 V.
Yes, the IRLZ44ZSTRRPBF carries an Obsolete lifecycle status. Infineon has discontinued this exact ordering code, and the last-time-buy window is closed.
For a drop-in replacement, a designer would need to cross-reference the 55 V Vdss, 51 A Id, 13.5 mOhm Rds(on) at 10 V, and the D2PAK package. Contact our desk with the target application and we can suggest a current-production Infineen HEXFET that meets the parametric envelope.