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Infineon Technologies IRLZ44ZSPBF — Discrete Semiconductors

IRLZ44ZSPBF HEXFET N-Channel MOSFET, 55 V, 13.5 mOhm

MPNIRLZ44ZSPBF
End of Life

Infineon HEXFET® IRLZ44ZSPBF, N-Channel MOSFET, 55 Vdss, 13.5 mOhm Rds(on) max at 10 V, 51 A continuous drain, logic-level gate drive, D2PAK surface-mount package, -55°C to 175°C junction temperature.

$2.3200Ref. price · indicative, final on quote
Infineon Technologies IRLZ44ZSPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRLZ44ZSPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C51A (Tc)
Power dissipation80W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs13.5mOhm @ 31A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1620 pF @ 25 V

Product details

The 36 nC total gate charge at 5 V gate drive is modest for a 51 A rated part, which keeps switching losses manageable in a 50–200 kHz hard-switched converter. For a load-switch or low-frequency PWM application below 20 kHz, the gate charge is essentially irrelevant; the static Rds(on) and the thermal impedance of the D2PAK pad to the PCB copper are the design parameters that matter.

Active production, sourced to order

For volume BOM commitments, the part is specified into the bill of materials and sourced on a per-order basis.

Frequently asked questions

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What is the package and pinout of IRLZ44ZSPBF?

Correct package type and pin layout are critical for PCB footprint and assembly compatibility.

Is IRLZ44ZSPBF obsolete?

Lifecycle status affects long-term availability and potential need for redesign if the part is end-of-life.