Infineon HEXFET® IRLZ44ZS, N-Channel MOSFET, 55 V Vdss, 51 A continuous drain, 13.5 mOhm Rds(on) at 10 V, 36 nC gate charge, D2PAK surface-mount package, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 51A (Tc) |
| Power dissipation | 80W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 13.5mOhm @ 31A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1620 pF @ 25 V |
The gate charge of 36 nC at 5 V means the gate driver does not need a high peak current for fast switching; a typical microcontroller GPIO through a series resistor can drive the gate for low-frequency switching.
The device comes in a TO-263-3 / D2PAK surface-mount package (also known as D²Pak), which is a common power-package footprint with a large exposed tab for heat sinking.
The maximum on-resistance is 13.5 mOhm at 31 A drain current with 10 V gate drive. The device also supports 4.5 V gate drive for logic-level operation, though the on-resistance will be higher than the 10 V value.
The maximum gate threshold voltage is 3 V at 250 µA drain current. This means the device starts conducting with a gate-source voltage above 3 V, and full enhancement for minimum on-resistance requires 10 V gate drive.