Infineon HEXFET® IRLZ44ZPBF, N-Channel MOSFET, 55 V Vdss, 51 A continuous drain, 13.5 mOhm Rds(on) at 10 V, TO-220-3, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 51A (Tc) |
| Power dissipation | 80W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 13.5mOhm @ 31A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1620 pF @ 25 V |
Sourcing through independent distribution can fill bridge quantities, but the design should plan for a substitute before the LTB window closes.
Because the IRLZ44ZPBF is in Last Buy status, standard distributor stock may be depleted.
The IRLZ44ZPBF is in Last Buy status — Infineon has announced end-of-life, and the final purchasing window is open. It is not yet obsolete, but production will cease after the last-time-buy period.
A pin-compatible N-channel TO-220 MOSFET with similar Vdss (55 V), continuous drain current (51 A), and Rds(on) (13.5 mOhm at 10 V) would be the closest functional alternative, but qualification testing is required before substitution.
The IRLZ44ZPBF is an N-channel HEXFET MOSFET in a TO-220-3 package.