Infineon Technologies · HEXFET® Series
Infineon Technologies HEXFET® N-Channel MOSFET, 55V Vdss, 30A Id, 35mOhm Rds(on) at 10V, TO-220-3 (TO-220AB), Through Hole, Tube.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 68W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 35mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 880 pF @ 25 V |
The IRLZ34NPBF: The 35 mOhm max on-resistance at 16 A, 10 V gate drive keeps conduction losses manageable in a TO-220AB through-hole package.
The ±16 V gate-to-source maximum gives headroom for gate drive transients in unregulated supply rails.
