Infineon HEXFET® N-Channel MOSFET, 55 V drain-source, 18 A continuous drain at 25°C, 60 mOhm max on-resistance at 10 V gate drive, through-hole TO-220AB package.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 11A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 480 pF @ 25 V |
Gate charge is 15 nC at 5 V. Input capacitance is 480 pF at 25 V drain-source.
This FET is sized for low-to-medium power switching: battery management in power tools and e-bikes, solenoid and relay drivers, and general-purpose load switches in industrial control panels.
It is ROHS3 compliant, which satisfies the latest EU RoHS directive requirements.
IRLZ24NPBF is a logic-level version of the standard-threshold IRFZ24N. Both are N-channel 55 V FETs in TO-220 packages, but IRLZ24NPBF has a lower gate threshold (2 V max vs typically 4 V for IRFZ24N), so it can be driven directly from 5 V logic without a separate gate-drive supply. Check your gate drive voltage — if it is 10 V, either part works; if it is 5 V or 3.3 V, IRLZ24NPBF is the correct choice.