55 V, 18 A logic-level N-channel MOSFET in TO-220AB
The Infineon IRLZ24NPBF is an N-channel enhancement-mode MOSFET from the HEXFET® series, rated for 55 V drain-to-source voltage and 18 A continuous drain current at a 25°C case temperature. It comes in a through-hole TO-220AB package, the same footprint as the industry-standard TO-220, making it a drop-in replacement for many 55 V logic-level FETs in existing board layouts. Gate charge is 15 nC at 5 V. Input capacitance is 480 pF at 25 V drain-source. The operating junction temperature range spans -55°C to 175°C, covering industrial and automotive under-hood environments. Maximum power dissipation is 45 W at case temperature 25°C, derated above that per the thermal curve in the datasheet.
Where it fits — typical applications
This FET is sized for low-to-medium power switching: battery management in power tools and e-bikes, solenoid and relay drivers, and general-purpose load switches in industrial control panels. The logic-level threshold eliminates the need for a separate gate-drive supply when driven from 5 V logic outputs.
Lifecycle and supply posture
It is ROHS3 compliant, which satisfies the latest EU RoHS directive requirements.
