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Infineon Technologies IRLU8729-701PBF — Discrete Semiconductors

IRLU8729-701PBF N-Channel MOSFET, 30V 58A, 8.9mOhm

MPNIRLU8729-701PBF
Active

IRLU8729-701PBF, Infineon HEXFET® N-Channel MOSFET, 30 V, 58 A, 8.9 mOhm Rds(on) at 10 V, 16 nC gate charge, through-hole TO-251-3, -55°C to 175°C junction.

$0.29Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRLU8729-701PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power55.0
Package_typeBulk
Capacitance_uf0.0013
StatusActive
Supply voltage30.0
Vgs(Th) (Max) @ id2.35 V @ 25µA
Switching current58.0
Rds on (Max) @ id, vgs8.9mOhm @ 25 A, 10 V
Gate charge (Qg) (Max) @ vgs16 nC @ 4.5 V

Product details

What this 30 V N-channel HEXFET brings to the board

The Infineon IRLU8729-701PBF is a 30 V, 58 A N-channel MOSFET from the HEXFET series, housed in a through-hole TO-251-3 package. Its key specs for the BOM: 8.9 mOhm max Rds(on) at 25 A with a 10 V gate drive, and a 16 nC gate charge at 4.5 V.

The 16 nC gate charge at 4.5 V is listed in the datasheet. The ±20 V gate-source rating gives headroom against ringing on long gate traces, which is common in retrofit panel wiring where the MOSFET sits a few inches from the driver.

For a storeroom keeper, that means you can order replenishment without hunting surplus stock.

Package and mounting — through-hole for serviceability

The TO-251-3 through-hole package is a three-lead vertical mount. It suits boards where a technician will hand-solder replacements in the field — no reflow profile needed, just a soldering iron and a desoldering pump.

Frequently asked questions

What is the gate charge of IRLU8729-701PBF?

The total gate charge (Qg) is 16 nC at a 4.5 V gate drive.