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Infineon Technologies IRLU3410PBF

IRLU3410PBF HEXFET N-Channel MOSFET, 100 V 17 A, 105 mOhm

MPNIRLU3410PBF
End of Life

Infineon HEXFET® IRLU3410PBF, N-Channel MOSFET, 100 Vdss, 17 A continuous, 105 mOhm Rds(on) at 10 V, 34 nC gate charge, TO-251AA IPAK through-hole, -55 to 175 °C.

$1.2Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRLU3410PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs105mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 25 V

Product details

100 V, 17 A — where the ratings land

The IRLU3410PBF: This is a 100 Vdss, 17 A continuous N-channel HEXFET in a through-hole package. The 105 mOhm on-resistance at 10 A, 10 V sets the conduction loss floor. The 34 nC total gate charge at 5 V means a modest gate-drive current; a 1 A driver can switch it in under 100 ns, making it suitable for hard-switched converters up to the 100 kHz range without excessive driver loss.

175 °C junction — high-temp industrial fit

Rated for -55 to 175 °C junction temperature, this part handles the thermal headroom required in engine-bay electronics, industrial power supplies, and motor drives.

Through-hole IPAK — board-mount reality

The through-hole package has three short leads soldered into the PCB — no heatsink tab exposed on the top side, so thermal management relies on the copper pad area on the board.

Frequently asked questions

What is the Rds(on) of IRLU3410PBF?

Maximum on-resistance is 105 mOhm at 10 A drain current and 10 V gate drive. At 4 V gate drive the Rds(on) is higher — the datasheet curve gives the typical value; for worst-case conduction loss use the 105 mOhm figure at 10 V.

What package is IRLU3410PBF?

It comes in a TO-251AA IPAK through-hole package with three short leads.

What is the equivalent of IRLU3410PBF?

The IPD50R950CEAUMA1 is a CoolMOS 500 V part in a surface-mount package — it is not a functional substitute due to the different voltage class, package, and drive requirements.