Infineon HEXFET series, N-Channel MOSFET, 100 V drain-source, 42 A continuous drain at 25°C, 14 mOhm Rds(on) at 10 V gate drive, IPAK (TO-251AA) through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 42A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 2.5V @ 100µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 38A, 10V |
| Gate charge (Qg) (Max) @ vgs | 48 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3980 pF @ 25 V |
The IRLU3110ZPBF HEXFET N-channel MOSFET has a gate charge of 48 nC at 4.5 V and input capacitance of 3980 pF at 25 V.
The IPAK (TO-251AA) package has short leads and a through-hole mounting style. It fits into the same PCB footprint as a TO-252 DPAK surface-mount part with a different hole pattern, but the through-hole tab solders into the board and conducts heat to the copper plane.
ROHS3 compliant per the listing.
The maximum on-resistance is 14 mOhm at 38 A drain current with 10 V gate-source voltage. The drive voltage range for achieving the rated Rds(on) is 4.5 V to 10 V.
Yes, the part is listed as ROHS3 compliant.