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Infineon Technologies IRLU120NPBF
Infineon Technologies

IRLU120NPBF HEXFET N-Channel MOSFET, 100V 10A IPAK

MPNIRLU120NPBF
End of Life

Infineon HEXFET® IRLU120NPBF, N-Channel MOSFET, 100V Vdss, 10A Id, 185mOhm Rds(on) at 10V, TO-251-3 IPAK, -55°C to 175°C.

$1.08Ref. price · indicative, final on quote
IRLU120NPBF datasheet
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRLU120NPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation48W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs185mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 25 V

Product details

100V N-channel HEXFET in a TO-251 IPAK

The Infineon IRLU120NPBF is an N-channel enhancement-mode MOSFET from the HEXFET family, built on a planar stripe DMOS process.

Gate drive and switching profile

The gate threshold voltage is specified at 2 V maximum with Id = 250 µA, and the recommended drive voltage range spans 4 V to 10 V for minimum on-resistance. Total gate charge is 20 nC at Vgs = 5 V, and input capacitance Ciss is 440 pF at Vds = 25 V — numbers that keep the gate drive energy low enough for a simple bipolar or logic-level driver in a 50–200 kHz switching stage. Maximum power dissipation is 48 W at case temperature, which sets the thermal budget for the heatsink or PCB copper area under the IPAK tab. The 185 mOhm Rds(on) at 10 V means conduction loss at 6 A is about 6.7 W — well within the package capability with adequate thermal management.

Frequently asked questions

What is the Rds(on) of IRLU120NPBF at 10V?

This is the spec to use for worst-case conduction loss calculations in the switching loop.

Is IRLU120NPBF still active or obsolete?

No discontinuation notice or last-time-buy schedule has been issued.

Is IRLU120NPBF RoHS compliant?

Yes, it is ROHS3 compliant, meaning it meets the current RoHS directive without lead exemptions.

What MOSFET can replace IRLU120NPBF?

For a cross-reference, compare parts in the same 100 V, 10 A, TO-251 IPAK class with similar Rds(on) and gate charge — but verify pinout and thermal performance against your specific layout.