IRLTS6342TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-Channel MOSFET, IRLTS6342TRPBF, 30 V Vdss, 8.3 A Id, 17.5 mOhm Rds(on) at 4.5 V, SOT-23-6 package, -55°C to 150°C.

Infineon Technologies IRLTS6342TRPBF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLTS6342TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C8.3A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id1.1V @ 10µA
Rds on (Max) @ id, vgs17.5mOhm @ 8.3A, 4.5V
Gate charge (Qg) (Max) @ vgs11 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1010 pF @ 25 V

Technical details

The 17.5 mOhm on-resistance at 4.5 Vgs keeps conduction losses low in a 3 A to 5 A load path — at 5 A the dissipation is under 0.5 W, which the SOT-23-6 can sink with a decent copper pour on the drain pad. The total gate charge of 11 nC at 4.5 V means the gate driver sees a light capacitive load; a 1 A driver switches the FET in under 15 ns, so the switching edge is fast enough for a 100 kHz to 200 kHz buck converter without excessive cross-conduction.

SOT-23-6 rework and board integration

The SOT-23-6 package has a 0.95 mm pitch and a small body — the drain tab is on the centre pins (pins 4, 5, 6), so the PCB layout should tie those together with a thermal-relief via to an inner-layer copper plane. The part is rated for a maximum power dissipation of 2 W at 25°C ambient, but that assumes a standard FR-4 board with minimal copper; real-world continuous dissipation is closer to 1 W for a 1 oz pour. Under a hot-air rework station, the small package heats quickly — use a 300°C nozzle at low airflow and lift the part when the solder on all six joints is molten, not before.

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