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Infineon Technologies IRLTS6342TRPBF

IRLTS6342TRPBF N-Channel MOSFET, 30 V, 8.3 A, SOT-23-6

MPNIRLTS6342TRPBF
End of Life

Infineon HEXFET N-Channel MOSFET, IRLTS6342TRPBF, 30 V Vdss, 8.3 A Id, 17.5 mOhm Rds(on) at 4.5 V, SOT-23-6 package, -55°C to 150°C.

$0.49Ref. price · indicative, final on quote
PackagingSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRLTS6342TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C8.3A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id1.1V @ 10µA
Rds on (Max) @ id, vgs17.5mOhm @ 8.3A, 4.5V
Gate charge (Qg) (Max) @ vgs11 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1010 pF @ 25 V

Product details

The 17.5 mOhm on-resistance at 4.5 Vgs keeps conduction losses low in a 3 A to 5 A load path — at 5 A the dissipation is under 0.5 W, which the SOT-23-6 can sink with a decent copper pour on the drain pad. The total gate charge of 11 nC at 4.5 V means the gate driver sees a light capacitive load; a 1 A driver switches the FET in under 15 ns, so the switching edge is fast enough for a 100 kHz to 200 kHz buck converter without excessive cross-conduction.

SOT-23-6 rework and board integration

The SOT-23-6 package has a 0.95 mm pitch and a small body — the drain tab is on the centre pins (pins 4, 5, 6), so the PCB layout should tie those together with a thermal-relief via to an inner-layer copper plane. The part is rated for a maximum power dissipation of 2 W at 25°C ambient, but that assumes a standard FR-4 board with minimal copper; real-world continuous dissipation is closer to 1 W for a 1 oz pour. Under a hot-air rework station, the small package heats quickly — use a 300°C nozzle at low airflow and lift the part when the solder on all six joints is molten, not before.

Frequently asked questions

Can I replace IRLTS6342TRPBF with another 30 V N-channel MOSFET?

A direct replacement must match the 30 V Vdss, 8.3 A Id rating, logic-level gate threshold (Vgs(th) max 1.1 V at 10 µA), and the SOT-23-6 footprint. The IPD50R950CEAUMA1 is a 500 V CoolMOS part — it is not a functional substitute because its voltage class and Rds(on) are orders of magnitude different. Stick to 30 V logic-level N-channel FETs in the same package for a drop-in swap.