IRLTS2242TRPBF

Infineon Technologies · HEXFET® Series

MOSFET P-CH 20V 6.9A 6TSOP

Infineon Technologies IRLTS2242TRPBF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLTS2242TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C6.9A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id1.1V @ 10µA
Rds on (Max) @ id, vgs32mOhm @ 6.9A, 4.5V
Gate charge (Qg) (Max) @ vgs12 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds905 pF @ 10 V
IRLTS2242TRPBF
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