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Infineon Technologies IRLS3036TRLPBF

IRLS3036TRLPBF HEXFET N-Ch MOSFET, 60 V, 195 A, 2.4 mOhm

MPNIRLS3036TRLPBF
End of Life

Infineon HEXFET® IRLS3036TRLPBF, N-Channel MOSFET, 60 V Vdss, 195 A Id, 2.4 mOhm Rds(on) @ 10 V, D2PAK (TO-263), -55°C to 175°C.

$3.66Ref. price · indicative, final on quote
Infineon Technologies IRLS3036TRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRLS3036TRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation380W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs2.4mOhm @ 165A, 10V
Gate charge (Qg) (Max) @ vgs140 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds11210 pF @ 50 V

Product details

Gate drive and switching behaviour

The IRLS3036TRLPBF: The gate is specified for a drive voltage range of 4.5 V to 10 V, with the 2.4 mOhm Rds(on) guaranteed at 10 V. Gate charge is 140 nC max at 4.5 V. Input capacitance Ciss is 11210 pF at 50 V drain-source. This is a large number — the gate driver sees a ~11 nF capacitive load, so switching losses at high frequency (above 100 kHz) become significant. The part is best suited for hard-switching applications below 50 kHz or soft-switching topologies where the Miller plateau is managed.

Frequently asked questions

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What is the equivalent of IRLS3036TRLPBF?

When the exact part is unavailable, a drop-in replacement is needed to avoid redesign.

Is IRLS3036TRLPBF obsolete?

Lifecycle status directly impacts long-term availability and support for ongoing production.