IRLS3034TRL7PP

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-Channel MOSFET, 40 V drain-source, 240 A continuous drain, 1.4 mOhm max Rds(on) at 10 V, D2PAK-7 (TO-263-7), surface mount.

Infineon Technologies IRLS3034TRL7PP
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLS3034TRL7PP specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C240A (Tc)
Power dissipation380W (Tc)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs1.4mOhm @ 200A, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds10990 pF @ 40 V

Technical details

1.4 mOhm at 10 V — the conduction-loss ceiling

The IRLS3034TRL7PP N-channel MOSFET has a 1.4 mOhm max Rds(on) at 10 V, 200 A. The 380 W package dissipation rating provides headroom for a heatsinked design with a solid copper pour on the D2PAK-7 thermal pad.

Gate charge and driver budget

Gate charge is 180 nC max at 4.5 V. The D2PAK-7 package includes a dedicated source Kelvin connection (the seventh lead) to reduce common-source inductance in the gate loop.

ROHS3 compliant.

D2PAK-7 footprint — not your standard D2PAK

That means the PCB footprint is different from a standard D2PAK-6; the extra pad sits between the source and gate on the gate-driver side. If you're replacing a D2PAK-6 part, the layout needs that extra land pattern. The exposed tab is the drain, same as any D2PAK.

IRLS3034TRL7PP
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