Infineon Technologies · HEXFET® Series
Infineon HEXFET® series IRLR9343TRPBF, P-Channel MOSFET, 55 V Vdss, 20 A Id, 105 mOhm Rds(on) at 10 V, 47 nC Qg, TO-252-3 (DPak) package, -40°C to 175°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 79W (Tc) |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 105mOhm @ 3.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 47 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 660 pF @ 50 V |
The Infineon IRLR9343TRPBF is a HEXFET® series P-channel MOSFET rated for 55 V drain-source breakdown and 20 A continuous drain current at a 25 °C case temperature.
The junction temperature rating extends to 175 °C.
For volume requirements or scheduled releases, the active lifecycle status means the factory pipeline is open and no allocation shadow hangs over the line item.
