IRLR8743TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRLR8743TRPBF, N-Channel MOSFET, 30 V Vdss, 160 A continuous drain, 3.1 mOhm Rds(on) at 25 A, 10 V, D-Pak (TO-252) surface mount, -55°C to 175°C junction temperature.

Infineon Technologies IRLR8743TRPBF
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[IN STOCK] In Stock: 14 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR8743TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C160A (Tc)
Power dissipation135W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.35V @ 100µA
Rds on (Max) @ id, vgs3.1mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs59 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds4880 pF @ 15 V

Technical details

Gate-drive budget: 4.5 V logic-level threshold

A driver that swings to at least 4.5 V is needed. Input capacitance Ciss is 4880 pF at 15 V drain-source.

Thermal reality: 135 W in the DPAK tab

Maximum power dissipation is 135 W at case temperature — that figure assumes the tab is soldered to a large copper island with good thermal vias to an inner plane. In a real 1-oz two-layer board, the continuous current is derated well below 160 A; the package thermal resistance dominates. The DPAK (TO-252) footprint has a single exposed tab on the drain. The tab must be connected to the drain net with a copper area and thermal-via array for the 175°C junction rating.

ROHS3 compliant, so the part passes current EU exemption rules for lead-free assembly.

IRLR8743TRPBF
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