30 V, 86 A N-channel — the conduction-loss floor
The IRLR8726TRPBF: That Rds(on) sets the conduction-loss floor for the design — at 25 A the dissipation is under 3.6 W at 25°C junction, before the temperature derating curve kicks in.
Gate drive and switching — what the numbers mean
Gate charge is 23 nC maximum at 4.5 V, which means a modest gate-driver can switch this FET at moderate frequencies without excessive drive current. Input capacitance is 2150 pF at 15 V drain — the Miller plateau region is wide enough that the switching speed is set by the gate-drive source impedance, not the FET itself. The threshold voltage is 2.35 V maximum at 50 µA, which is a standard logic-level threshold — the FET turns on fully with 5 V gate drive, but the 2.35 V ceiling means it may not be fully enhanced at 3.3 V logic levels. For a 3.3 V gate-drive design, a lower-threshold FET is a safer choice.
Thermal and package — DPak mounting reality
The TO-252-3 (DPak) package has a maximum power dissipation of 75 W at case temperature, but that assumes an infinite heatsink. In a real board, the tab is the thermal path — the PCB copper area under the tab sets the junction-to-ambient thermal resistance.
The series is HEXFET, Infineon's trench-based power MOSFET platform.