Infineon HEXFET® IRLR7833TRPBF, N-Channel MOSFET, 30V Vdss, 140A Id, 4.5mOhm Rds(on) at 10V, DPAK (TO-252) surface mount, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 140A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.3V @ 250µA |
| Rds on (Max) @ id, vgs | 4.5mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 50 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4010 pF @ 15 V |
At 15A drain current and 10V gate drive, the maximum on-resistance is 4.5 mOhm.
The 4010 pF input capacitance at 15V Vds is typical for this current class; the gate-drive loop should be kept tight to avoid ringing. The DPAK footprint is shared with many TO-252 MOSFETs, so a layout validated for one often accepts this part with minor pad adjustments.
The two parts are electrically identical — same die, same ratings. The difference is packaging: IRLR7833TRPBF ships in Tape & Reel, while IRLR7833PBF ships in Tube (bulk). Choose the reel variant for automated pick-and-place assembly.
Yes. The 30V Vdss provides headroom above a 12V bus for inductive flyback. The 4.5 mOhm Rds(on) at 10V gate drive keeps conduction losses low, and the 140A continuous rating far exceeds typical motor-start surge currents. Ensure the gate driver can supply the 50 nC gate charge at the switching frequency.