IRLR6225TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET series, N-Channel MOSFET, 20 V Vdss, 100 A continuous drain, 4 mOhm Rds(on) at 4.5 V gate drive, D-Pak (TO-252) surface mount, -50°C to 150°C junction temperature.

Infineon Technologies IRLR6225TRPBF
Download datasheet (PDF)
[IN STOCK] In Stock: 1 pcs
$0.87/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR6225TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation63W (Tc)
Operating temperature-50°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1.1V @ 50µA
Rds on (Max) @ id, vgs4mOhm @ 21A, 4.5V
Gate charge (Qg) (Max) @ vgs72 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3770 pF @ 10 V

Technical details

IRLR6225TRPBF total gate charge is 72 nC at 4.5 V. Input capacitance is 3770 pF at 10 V drain bias.

Package and marking — D-Pak, tape-and-reel

The device is marked with the Infineon logo and a date-code laser etch on the top face. The D-Pak tab is the drain; the two short leads are gate and source. The exposed copper tab must be soldered to the PCB pad for thermal performance — the datasheet copper-land pattern is the reference.

Date-code and lot traceability are confirmed at shipment; the laser-etched marking on the D-Pak body is a forensic check point for a counterfeit screen.

IRLR6225TRPBF
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