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Infineon Technologies IRLR3915TRPBF

IRLR3915TRPBF HEXFET N-Ch 55V 30A D-Pak, Active

MPNIRLR3915TRPBF
End of Life

Infineon HEXFET series, IRLR3915TRPBF, N-Channel MOSFET, 55 V drain-source, 30 A continuous drain, 14 mOhm Rds(on) max at 10 V, 92 nC gate charge, D-Pak (TO-252) surface mount, -55 to 175 °C junction.

$1.73Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRLR3915TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation120W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs14mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1870 pF @ 25 V

Product details

55 V, 30 A N-channel HEXFET — switching and conduction loss budget

Gate charge totals 92 nC at 10 V, which means a 1 A gate driver can charge the gate in about 92 ns — practical for switching frequencies up to the low tens of kHz before driver current becomes the limiting factor. Input capacitance is 1870 pF at 25 V drain bias.

175 °C junction — under-hood and high-ambient margin

That extra 25 °C headroom matters in under-hood motor drives, engine bay solenoid drivers, and industrial power supplies where ambient air can hit 105 °C and the junction sees the ripple. The D-Pak (TO-252) surface-mount package with a single tab for the drain connection requires a copper pad on the PCB for thermal management — the 120 W dissipation rating assumes the tab is soldered to a large copper area.

Active production — no last-time-buy pressure

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IRLR3915TRPBF?

Maximum on-resistance is 14 mOhm at 30 A drain current with 10 V gate-to-source drive. At 5 V drive the Rds(on) will be higher — the datasheet specifies drive voltage for max Rds(on) as 5 V and 10 V.

What is the gate charge of IRLR3915TRPBF?

Total gate charge is 92 nC maximum at 10 V gate drive. This is the charge the gate driver must supply to switch the FET on; a 1 A driver can deliver 92 nC in about 92 ns.

Is IRLR3915TRPBF RoHS compliant?

Yes, it is ROHS3 compliant per the listing.