IRLR3915TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET series, IRLR3915TRPBF, N-Channel MOSFET, 55 V drain-source, 30 A continuous drain, 14 mOhm Rds(on) max at 10 V, 92 nC gate charge, D-Pak (TO-252) surface mount, -55 to 175 °C junction.

Infineon Technologies IRLR3915TRPBF
[IN STOCK] In Stock: 220 pcs
$1.27/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR3915TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation120W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs14mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1870 pF @ 25 V

Technical details

55 V, 30 A N-channel HEXFET — switching and conduction loss budget

175 °C junction — under-hood and high-ambient margin

That extra 25 °C headroom matters in under-hood motor drives, engine bay solenoid drivers, and industrial power supplies where ambient air can hit 105 °C and the junction sees the ripple. The D-Pak (TO-252) surface-mount package with a single tab for the drain connection requires a copper pad on the PCB for thermal management — the 120 W dissipation rating assumes the tab is soldered to a large copper area.

ROHS3 compliant.

IRLR3915TRPBF
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