IRLR3636TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET series, IRLR3636TRPBF N-channel MOSFET, 60 V Vdss, 50 A Id, 6.8 mOhm Rds(on) max at 10 V, 49 nC gate charge, DPak (TO-252) surface mount, -55°C to 175°C operating junction temperature.

Infineon Technologies IRLR3636TRPBF
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[IN STOCK] In Stock: 2,632 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR3636TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation143W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 100µA
Rds on (Max) @ id, vgs6.8mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs49 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3779 pF @ 50 V

Technical details

60 V, 50 A N-channel — where this FET sits in a power rail

The IRLR3636TRPBF: That 60 V rating gives comfortable headroom on a 48 V nominal bus or a 12 V automotive rail with load-dump transients. The 50 A continuous rating is the thermal limit at Tc=25°C — real-world current depends on heatsinking and ambient temperature.

6.8 mOhm Rds(on) — what it costs you in conduction loss

49 nC gate charge at 4.5 V. 3779 pF input capacitance at 50 V.

DPak package — rework and board layout

DPak (TO-252) surface mount package.

Lifecycle and compliance — no EOL pressure

IRLR3636TRPBF
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